Pulsed Capacitance Measurement of Silicon Carbide (SiC) Schottky Diode and SiC Metal Oxide Semiconductor

Abstract

The incremental capacitance C was measured for a silicon carbide (SiC) Schottky diode during a reverse-biasing pulse and for two SiC n-MOS transistors during a negative pulse to their source with the drain grounded. C was measured as a function of pulsed voltage to 600 V, and on a gain-phase analyzer as a function of frequency and bias voltage to 40 V.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Nov 01, 2006
Accession Number
ADA458317

Entities

People

  • Timothy E. Griffin

Organizations

  • United States Army Research Laboratory

Tags

DTIC Thesaurus Topics

  • Analyzers
  • Capacitance
  • Carbides
  • Compound Semiconductors
  • Diodes
  • Frequency
  • Impedance
  • Measurement
  • Metal Oxide Semiconductors
  • Metal Oxides
  • Oxides
  • Pulse Generators
  • Resistance
  • Schottky Diodes
  • Semiconductors
  • Silicon
  • Silicon Carbide

Fields of Study

  • Materials science

Readers

  • Plasma Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics