1570V, 14A 4H-SiC Bipolar Darlington with a High Current Gain of Beta>462
Abstract
This paper reports the design, fabrication and characterization of a 4H-SiC bipolar Darlington with both high DC common emitter current gain and high voltage. The driving and output transistors are designed and fabricated on the same chip with a 12um, 8.5x10(15)cm(-3) doped drift layer and a 1 um 4.1x10(17)cm(-3) doped p base. The Darlington's drive transistor is capable of 1,600V and 5A with a maximum current gain beta(sub 1) over 25 at a collector current density J(sub C1)=250A/cm2 with a specific on-resistance (RSP_ON) of 12.2mOhmscm2. The output transistor can handle over 23A and a blocking voltage higher than 1600V with a peak current gain beta(sub 2)>22 at J(sub C2)=261A/cm2 and an R(SP_ON) of 13.4mOhmscm2. The Darlington's DC current gain at room temperature is found to increase with the collector current, up to 462 at I(subC2)=13.9A (232A/cm2), limited by the measurement instrument. The Darlington can block voltages up to 1571V, conduct an I(sub C)=14A at V(sub F)=7.5V and provide a differential R(SP_ON) of 16.7mOhmscm2 at J(sub C2) up to over 240 A/cm2. Temperature-dependent I-V characteristics will be presented for the driving and output transistors. DC common emitter current gains will also be reported for the driving and output transistors as well as the Darlington.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2003
- Accession Number
- ADA458623
Entities
People
- Jian H. Zhao
- Jianhui Zhang
- Petre Alexandrov
- Terry Burke
Organizations
- Tank-automotive and Armaments Command