Model of High-Energy-Density Battery Based on SiC Schottky Diodes

Abstract

Silicon carbide (SiC) diodes are being investigated as direct energy converters (DECs) for use in small, long-lived nuclear power sources for unattended sensors. Voltage and current measurements on Schottky diodes fabricated from both Si and SiC result in typical efficiencies of 5 to 15%. A drift-diffusion model has been developed to predict the output and to help us better understand the radiation-induced current that results. This report describes the initial conditions, the drift-diffusion algorithm, and the material parameters used in the model. The results of the model compare well to experimental data.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Oct 01, 2006
Accession Number
ADA459250

Entities

People

  • Bruce Geil
  • Marc S. Litz
  • Yves Ngu

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Ceramic Materials
  • Compound Semiconductors
  • Diffusion
  • Diodes
  • Efficiency
  • Electric Fields
  • Electrons
  • Energy
  • Equations
  • Fermi Levels
  • High Energy
  • Metal-Semiconductor Junctions
  • Radiation
  • Schottky Diodes
  • Semiconductors
  • Silicon Carbide
  • Work Functions

Readers

  • Computational Fluid Dynamics (CFD)
  • Electrical Engineering
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy