Fundamental Research on Infrared Detection
Abstract
Fundamental research issues on infrared photodetectors are reported. These include the following: Task 1. HgCdTe (MCT) defect study Continuing the research on degradation of MCT, we explore the size changing of the dislocation loops and the effect of low-dose electron beam irradiation during TEM analysis. Self-energy correction is included to calculate the MCT defect states. For the photoluminescence image, we correlate the PL images from MCTs and their CZT substrates. Task 2. Antimony-based type-II superlattice (T2-SL) photodetectors We explored the temperature dependent and noise current characteristics of interband cascade detectors (ICDs). We also acquired type-II superlattice photodiodes from Jet Propulsion Lab and obtained a high detectivity of 5.23x1010 cmHz1/2/W at 77 K with devices of 10.5 m cutoff wavelength. Moreover, MOCVD growth of InAs/GaSb type-II superlattices was explored with substrates of both GaSb and GaAs. Task 3. Quantum dot infrared photodetectors (QDIPs) Our work has been focused on the growth and fabrication of high performance QDIP devices based on technologies developed. Defect-free 100-period InAs QD structure has been demonstrated. For InAs QDIPs grown on InP substrates by molecular beam epitaxy (MBE), peak detectivity of 2.1x109 cmHz1/2/W was achieved at a bias voltage of 0.8V.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 15, 2006
- Accession Number
- ADA459422
Entities
People
- J. O. White
- K. C. Hsieh
- K. Y. Cheng
- Russell D. Dupuis
- S. L. Chuang
- Y. C. Chang
Organizations
- University of Illinois Urbana–Champaign