GHz Modulation of GaAs-Based Bipolar Cascade VCSELs (Preprint)

Abstract

The high-frequency modulation characteristics of GaAs-based bipolar cascade vertical cavity surface emitting lasers operating at 980 nm with GaAs tunnel junctions and p-doped Al0.98Ga0.02As oxide apertures have been measured. We achieve -3 dB laser output modulations of 6.5 GHz for 2-stage and 9.4 GHz for 3-stage devices in response to small-signal current injection at an operating temperature of -50 ?C.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Nov 01, 2006
Accession Number
ADA459777

Entities

People

  • J. A. Lott
  • J. E. Ehret
  • John D. Albrecht
  • Robert Bedford
  • T. R. Nelson Jr.
  • W. J. Siskaninetz

Organizations

  • Air Force Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Sensors

DTIC Thesaurus Topics

  • Air Force
  • Air Force Facilities
  • Air Force Research Laboratories
  • Detectors
  • Distributed Bragg Reflectors
  • Electronics
  • Frequency
  • Frequency Modulation
  • Frequency Response
  • Governments
  • Lasers
  • Military Research
  • Modulation
  • Radio Frequency
  • Semiconductor Lasers
  • Semiconductors
  • Surface Emitting Lasers

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy