Performance Improvement in Quantum Well Lasers by Optimizing Band Gap Offset at Quantum Well Heterojunctions

Abstract

We analyze the influence of the band gap offset at the quantum well (QW) heterojunctions on the performance of QW lasers. It is shown that, in addition to the strain, optimization of the band gap offset also leads to improved performance in QW lasers, especially in enabling a simultaneous attainment of ultralow threshold current and high speed. The improvement stems from the reduction of state filling in the QW lasers since the asymmetry between the conduction band and the valence band structures in the optical confining region is compensated by the corresponding optimal band gap offset at the QW heterojunctions. The results provide general guidelines to the design of high performance of QW lasers as well as suggest applications to other active laser devices.

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Document Details

Document Type
Technical Report
Publication Date
Jul 26, 1993
Accession Number
ADA459969

Entities

People

  • A. Shakouri
  • A. Yariv
  • Bingyuan Zhao
  • T. R. Chen

Organizations

  • California Institute of Technology

Tags

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Conduction Bands
  • Energy Bands
  • Energy Gaps
  • Energy Levels
  • Ground State
  • Heterojunctions
  • Lasers
  • Quantum Well Lasers
  • Quantum Wells
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Quantum Computing