The Effect of Temperature on the Resonant Tunneling and Electric Field Domain Formation in Multiple Quantum Well Superlattices

Abstract

Analyzing the photocurrent spectra and the I-V characteristics of weakly coupled GaAs/AlGaAs multiquantum well structures, different transport regimes are distinguished. At low temperatures (below ~50 K), due to the electron coherence over a few periods of the superlattice, electron transport is dominated by sequential resonant tunneling. At higher temperatures, evidences for the increased contribution of nonresonant transport processes, and the subsequent modification in the electric field distribution in the device, are presented.

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Document Details

Document Type
Technical Report
Publication Date
Feb 15, 1997
Accession Number
ADA459984

Entities

People

  • Ali Xhakouri
  • Amnon Yariv
  • Yuanjian Xu

Organizations

  • California Institute of Technology

Tags

DTIC Thesaurus Topics

  • Absorption
  • Absorption Spectra
  • Crystal Lattice Vibrations
  • Electric Fields
  • Electron Emission
  • Electron Scattering
  • Electrons
  • High Temperature
  • Low Temperature
  • Quantum Tunneling
  • Quantum Wells
  • Scattering
  • Spectra
  • Superlattices
  • Three Dimensional
  • Transport Ships
  • Tunneling

Fields of Study

  • Materials science

Readers

  • Plasma Physics / Magnetohydrodynamics
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing