Improved Temperature Characteristics in Quantum Dot Lasers with Indirect-Bandgap Barriers

Abstract

This study demonstrates that a much high characteristic- temperature can be achieved with quantum dot lasers of indirect barrier compared to those of direct barrier. The temperature dependence of threshold current is reduced because the injected carriers residing in the barrier at high temperatures recombine slowly.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2003
Accession Number
ADA459997

Entities

People

  • Greg Sun
  • Jacob B Khurgin
  • Richard Soref

Organizations

  • Air Force Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Sensors

DTIC Thesaurus Topics

  • Air Force
  • Air Force Research Laboratories
  • Computer Programs
  • Current Density
  • Demography
  • Electronics Laboratories
  • High Temperature
  • Laser Materials
  • Lasers
  • Materials
  • Military Research
  • Quantum Dot Lasers
  • Quantum Dots
  • Semiconductor Devices
  • Semiconductor Lasers
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Mathematics or Statistics
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Quantum Computing