Sub-100 muA Current Operation of Strained InGaAs Quantum Well Lasers at Low TemperaturesL.
Abstract
Very low threshold currents (<100 muA) have been achieved in InGaAs strained single quantum well lasers at cryogenic temperatures. Threshold currents of 38 and 56 muA and external quantum efficiency ~ 1 mW/mA have been demonstrated under cw operation condition at temperatures of 6 and 77 K, respectively. The external quantum efficiency increased by about a factor of 2 at low temperatures (<100 K) in comparison to that at room temperature. These results are relevant to the prospect of integration of semiconductor lasers with low temperature electronics for high performance
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 03, 1994
- Accession Number
- ADA460002
Entities
People
- A. Shakouri
- A. Yariv
- Bingyuan Zhao
- L. E. Eng
- T. R. Chen
- Y. H. Zhuang
Organizations
- California Institute of Technology