Effect of O2 Partial Pressure on YBa2Cu3O7-delta Thin Film Growth by Pulsed Laser Deposition
Abstract
YBa(2)Cu(3)O(7-delta) thin films were processed by pulsed laser deposition on (1 0 0) LaAlO(3) substrates using O(2) partial pressures from 120 to 1200 mTorr. The effect of O(2) pressure on film properties, including room temperature resistivities and microstructures, was studied for a unique set of deposition parameters. The film quality was observed to remain high over a wide range of O(2) partial pressures, with much less sensitivity to O(2) pressure than previous studies which are compared. For O(2) pressures from 200 to 1200 mTorr, superconducting transition temperatures consistently reached values >91.5 K and transport critical current densities were 3-5 MA/sq cm (77 K, self-field). It is proposed that less sensitivity of film properties to O(2) pressure is achieved by: (1) reducing the particle velocity of the plume below a critical threshold, and (2) using a deposition temperature of 785 degrees C for adequate surface activation.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 2004
- Accession Number
- ADA460193
Entities
People
- I. Maartense
- John P. Murphy
- L. Brunke
- Paul N. Barnes
- Timothy J. Haugan
Organizations
- Air Force Research Laboratory