X-Ray Irradiation Effects in Top Contact, Pentacene Based Field Effect Transistors for Space Related Applications
Abstract
Preliminary studies of the effect of x-ray irradiation, typically used to simulate radiation effects in space, on top contract, pentacene based field effect transistors have been carried out. Threshold voltage shifts in irradiated devices are consistent with positive charge trapping in the gate dielectric and a rebound effect is observed, independent of the sign of applied electric field during irradiation. Carrier mobility variations in positive electric field biased/irradiated devices are interpreted in terms of the effects of interface-state-like defects.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2006
- Accession Number
- ADA460567
Entities
People
- Abhijit B. Mallik
- Mang-mang Ling
- Mark Roberts
- R. A. Devine
- Zhenan Bao
Organizations
- Air Force Research Laboratory