P-type SiGe/Si Superlattice Cooler

Abstract

The fabrication and characterization of single element p-type SiGe/Si superlattice coolers are described. Superlattice structures were used to enhance the device performance by reducing the thermal conductivity between the hot and the cold junctions, and by providing selective emission of hot carriers through thermionic emission. The structure of the samples consisted of a 3 m thick symmetrically strained Si0.7Ge0.3/Si superlattice grown on a buffer layer designed so that the in-plane lattice constant is approximately that of relaxed Si0.9Ge0.1. Cooling up to 2.7 K at 25 C and 7.2 K at 150 C were measured. These p-type coolers can be combined with n-type devices that were demonstrated in our previous work. This is similar to conventional multi element thermoelectric devices, and it will enable us to achieve large cooling capacities with relatively small currents.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2000
Accession Number
ADA461125

Entities

People

  • Ali Shakouri
  • Channing C. Ahn
  • Chris Labounty
  • Edward Croke
  • Gehong Zeng
  • Gerry Robinson
  • John E. Bowers
  • Xiaofeng Fan

Organizations

  • University of California, Santa Barbara

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Abstracts
  • Conductivity
  • Crystal Lattices
  • Electron Microscopy
  • Engineering
  • Fabrication
  • Figure Of Merit
  • Heat Energy
  • Heat Sinks
  • Materials
  • Molecular Beam Epitaxy
  • Optoelectronic Devices
  • Superlattices
  • Thermal Conductivity
  • Thermionic Emission
  • Transmission Electron Microscopy
  • Very Large Scale Integration

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Solar Photovoltaics and Thermoelectric Devices.
  • Thin Film Deposition Science.