High Dielectric Constant Oxides for Advanced Micro-Electronic Applications

Abstract

A series of mixed oxide compounds have been manufactured and studied with a view to assessing their suitability for applications in advanced microelectronics: ZrO2, Ta2O5, LaAlO3, Sm2O3, Pr2O3, Nd2O3, TiO2, Ti(x)Si(1-x)O2. Although each material has distinct advantages, particularly in terms of the magnitude of the dielectric constant, none of those studied can satisfy all of the requirements for thin films on Si. Consideration of the situation likely to arise under real technological conditions leads us to conclude that there are major issues still to be resolved, if indeed they can, if the goals outlined in the semiconductor roadmap for 2016 and beyond are to be attained.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Nov 29, 2006
Accession Number
ADA461486

Entities

People

  • Roderick A. Devine

Organizations

  • University of New Mexico

Tags

DTIC Thesaurus Topics

  • Air Force Research Laboratories
  • Band Gaps
  • Chemical Vapor Deposition
  • Dielectric Films
  • Dielectric Permittivity
  • Dielectrics
  • Electrical Properties
  • Electron Beams
  • Energy Bands
  • Field Effect Transistors
  • Films
  • Materials
  • Materials Processing
  • Materials Science
  • Microelectronics
  • Semiconductors
  • Thin Films

Readers

  • Integrated Circuit Design and Technology.
  • Systems Analysis and Design
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene