Thermionic Emission Cooling in Single Barrier Heterostructures

Abstract

Nonisothermal transport in InGaAsP-based heterostructure integrated thermionic coolers is investigated experimentally. Cooling on the order of a degree over 1 mm thick barriers has been observed. This method can be used to enhance thermoelectric properties of semiconductors beyond what can be achieved with the conventional Peltier effect.

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Document Details

Document Type
Technical Report
Publication Date
Jan 04, 1999
Accession Number
ADA461836

Entities

People

  • Ali H. Shakouri
  • Chris Labounty
  • Joachim Piprek
  • John E. Bowers
  • Patrick Abraham

Organizations

  • University of California, Santa Cruz

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • California
  • Communication Systems
  • Emission
  • Energy
  • Fermi Levels
  • Heat Energy
  • Heat Sinks
  • Heterojunctions
  • Materials
  • Peltier Effect
  • Semiconductor Junctions
  • Semiconductors
  • Simulations
  • Thermal Conductivity
  • Thermal Resistance
  • Thermionic Emission
  • Thermoelectricity

Fields of Study

  • Materials science
  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Solar Photovoltaics and Thermoelectric Devices.
  • Thermal Physics or Thermal Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene