The Effect of Defects and Acoustic Impedance Mismatch on Heat Conduction SiGe Based Superlattices

Abstract

The cross-plane thermal conductivity of four Si/Ge, Si/Si0.4Ge0.6, and Si0.9Ge0.1/Si0.1Ge0.9 superlattices was measured using the 3omega technique. All four superlattices were found to have thermal conductivity values between 1.8 and 3.5 W/m-K, which are below the values of typical SixGe1-x alloys. The growth quality of these superlattices was evaluated qualitatively through the use of x-ray diffraction and transmission electron microscopy. These studies indicated that the superlattices contained a relatively high density of defects. The low thermal conductivity values are presumed to be due in large part to these defects.

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Document Details

Document Type
Technical Report
Publication Date
Nov 22, 2002
Accession Number
ADA461837

Entities

People

  • Alexis R. Abramson
  • Ali Shakouri
  • Arun Majumdar
  • Edward T. Croke
  • Scott T. Huxtable

Organizations

  • University of California, Berkeley

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Acoustic Impedance
  • Chemical Vapor Deposition
  • Crystal Lattices
  • Diffraction
  • Electron Microscopy
  • Engineering
  • Impedance
  • Materials
  • Mechanical Engineering
  • Resistance
  • Scattering
  • Thermal Conductivity
  • Thermal Resistance
  • Thickness
  • Transmission Electron Microscopy
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Solar Photovoltaics and Thermoelectric Devices.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics