Device Demonstration
Abstract
The goal of the Defense Advanced Research Projects Agency (DARPA) Advanced Lithography research program was to revolutionize semiconductor lithography through accelerated research of highly innovative approaches that would enable pattern transfer to wafers of features 100 nm and below. To this end, DARPA, via a Broad Agency Announcement, BAA 00-04, solicited proposals for R&D to understand and overcome specific technological obstacles to the realization of lithography for critical dimensions of 100 nm and smaller and the supporting technologies relevant to more than one lithography technology option. In response, Sanders, A Lockheed Martin Company, proposed "Device Demonstrations Using Point Source X-ray Lithography Technology" to enhance and utilize a previously developed X-ray lithography system to address next-generation sub-100 nm lithography demonstrations using point source X- ray Lithography. This program started in December 2001 and was eventually taken over by BAE Systems, Inc. after their acquisition of Sanders. Summarized in this Final Report are the highlights and current status of this effort.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 31, 2006
- Accession Number
- ADA462260