All Electrical Spin Detection in III-V Semiconductors

Abstract

The project goal, to demonstrate electrical detection of electron spin transport in a semiconductor, has been met. We have achieved a clear spin-valve effect in an in-plane magnetic field and coherent precession and Hanle effect in a perpendicular magnetic field using a silicon spin transport device.

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Document Details

Document Type
Technical Report
Publication Date
May 02, 2007
Accession Number
ADA462737

Entities

People

  • Ian R. Appelbaum

Organizations

  • University of Delaware

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Conduction Bands
  • Department Of Defense
  • Detection
  • Electric Fields
  • Electrical Measurement
  • Electrons
  • Films
  • Low Temperature
  • Magnetic Fields
  • Materials
  • Precession
  • Self Assembly
  • Semiconductor Devices
  • Semiconductors
  • Thin Films
  • Transistors
  • Transport Ships

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics