Low-Voltage Ferroelectric Phase Shifters From L- to C-Band

Abstract

This paper describes the design, fabrication and test results of a family of integrated low voltage ferroelectric phase shifters ranging in frequency of operation from 0.7 GHz to 6 GHz. All devices use a common material system of BaxSr1-xTiO3 (BST) thin-films on Al2O3 (sapphire), allowing integration with high-Q inductors and other passive microwave elements. Novel bias structures have also been developed to reduce the voltages required to tune the materials, making them more attractive for avionics systems applications.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2006
Accession Number
ADA463032

Entities

People

  • Andrew C Hunt
  • Dongsu Kim
  • J. S. Kenney
  • Mark G. Allen
  • Minsik Ahn
  • Xiaoyan Wang
  • Yong K. Yoon
  • Zhiyong Zhao

Organizations

  • Georgia Tech

Tags

Communities of Interest

  • Advanced Electronics
  • Space

DTIC Thesaurus Topics

  • Air Force
  • Bandwidth
  • C Band
  • Capacitors
  • Communication Systems
  • Ferroelectric Materials
  • Flip Chips
  • Frequency
  • Frequency Bands
  • Insertion Loss
  • Low Voltage
  • Materials
  • Mobile Communications
  • Phase Shift
  • Phased Arrays
  • Transmission Lines
  • Voltage

Fields of Study

  • Physics

Readers

  • Electronics Engineering
  • Materials Science and Engineering.