Stress-Engineered Quantum Dots for Multispectral Infra-Red Detector Arrays
Abstract
During the above-noted period of this Final Technical Report, the following salient milestones were reached: (1) Introduced and demonstrated the concept of injecting electrons into the quantum dot (OD) active infra-red absorbing region from bracketing doped contact layers (to suppress unwanted dark current) leaving the QD region undoped; (2) Introduced and demonstrated the benefits of the concepts of (a) strain-relieving OD capping layers, (b) current blocking layers, and (c) lateral potential confinement layer for tailoring the OD electronic response to the desired IR response; (3) Demonstrated high performance ODIP devices in the mid and longwavelength IR regions; (4) Demonstrated voltage-tunable mid and long IR dual wavelength ODIPs.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 2006
- Accession Number
- ADA463604
Entities
People
- A. Konkar
- A. Madhukar
- J. C. Campbell
- W. I. Wang
- Y. C. Chang
Organizations
- University of Southern California