Collaborative Research and Development. Delivery Order 0006: Transmission Electron Microscope Image Modeling and Semiconductor Heterointerface Characterization
Abstract
This research in support of the Air Force Research Laboratory, Materials and Manufacturing Directorate was conducted at Wright-Patterson AFB, Ohio from 19 May 2003 through 18 May 2006. Transmission electron microscope (TEM) characterization studies were performed on a variety of novel III-V semiconductor heterostructures being developed for advanced optoelectronic device applications. A new approach is developed for true atomic scale compositional mapping of interfaces in mixed cation-anion III-V semiconductor heterostructures. This approach is applied for quantifying stoichiometry of interfaces in InAs/InGaSb superlattices. Detailed TEM studies were performed on short-period InAs/GaSb superlattices with periods ranging from 50A to 11A. Significant degradation in structural quality was observed with reduction in the superlattice period. Improvement in quality is however achieved by reducing the growth rate (specifically in the GaSb growth rate). The formation of heterojunction quantum dots (QD) composed of a combination of InAs and GaSb is demonstrated. The composite dot is achieved by first forming InAs QDs by normal self assembly process followed by growth of a GaSb crown atop the InAs QD structure. Transmission electron microscopy indicated a clear boundary between the GaSb and InAs regions with energy dispersive spectroscopy analysis showing an In rich core and a Sb rich cap.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 2006
- Accession Number
- ADA463820
Entities
People
- K. Mahalingam
Organizations
- Universal Technology Corporation (United States)