First Demonstration of ~10 Microns FPAs in InAs/GaSb SLS
Abstract
The concept of Type II InAs/GaSb superlattice was first brought by Nobel Laureate L. Esaki, et al. in the 1970s. There had been few studies on this material system until two decades later when reasonable quality material growth was made possible using molecular beam epitaxy. With the addition of cracker cells for the group V sources and optimizations of material growth conditions, the superlattice quality become significantly improved and the detectors made of these superlattice materials can meet the demand in some practical field applications. Especially in the LWIR regime, it provides a very promising alternative to HgCdTe for better material stability and uniformity, etc. We have developed the empirical tight binding model (ETBM) for precise determination of the superlattice bandgap.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 2006
- Accession Number
- ADA464072
Entities
People
- Andrew Hood
- Binh M. Nguyen
- Darin Hoffman
- Erick Michel
- Manijeh Razeghi
- Meimei Z. Tidrow
- Pierre-yves Delaunay
- Ryan Mcclintock
- Vaidya Nathan
- Yajun Wei
Organizations
- Northwestern University