Experimental Studies of Electronic Transport of Chalcogenide Glass Electrical Switches

Abstract

The electrical conductivity, Seebeck coefficient, and Hall coefficient of 3 micron thick films of amorphous Ge2Sb2Te5 have been measured as functions of temperature from room temperature down to as low as 200 K. The electrical conductivity manifests an Arrhenius behavior. The Seebeck coefficient is p-type with behavior indicative of multi-band transport. The Hall mobility is n-type and low (near 0.07 sq cm/V sec at room temperature).

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 2006
Accession Number
ADA464166

Entities

People

  • Arthur H. Edwards
  • Dave Emin

Organizations

  • University of New Mexico

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Air Force Research Laboratories
  • Amorphous Materials
  • Chalcogenide Glass
  • Coefficients
  • Conductivity
  • Electrical Conductivity
  • Films
  • Glass
  • Government Procurement
  • Governments
  • Materials
  • Mobility
  • Spacecraft
  • Thick Films
  • Transport Ships
  • Vehicles

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene