InGaAs/AlGaAs Intersubband Transition Structures Grown on InAlAs Buffer Layers on GaAs Substrates by Molecular Beam Epitaxy
Abstract
We report on the use of InAlAs linearly graded buffer layers for improving the performance of In(sub y)Ga(sub 1-y)As(y>0.42)/0.42)/AlGaAs intersubband transition (ISBT) superlattice structures grown on GaAs substrates by molecular beam epitaxy. Linearly graded InAlAs buffer layers give better optical confinement in the active superlattice region, similar intersubband transition linewidths, and comparable surface morphology compared to linearly graded InGaAs buffer layers. The best surface morphology for our ISBT superlattices was obtained by growing the linearly graded InGaAs buffer layer at 360 degrees C.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 2000
- Accession Number
- ADA464508
Entities
People
- D. Scott Katzer
- G. Beadie
- Williams S. Rabinovich
Organizations
- United States Naval Research Laboratory