Properties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum Circuits

Abstract

A new single electron (SE) binary-decision diagram (BDD) node device having a single quantum dot connected to three nanowire branches through tunnel barriers was fabricated using etched AlGaAs/GaAs nanowires and nanometer-sized Schottky wrap gates (WPGs), and their operation was characterized experimentally, for the hexagonal BDD quantum circuit. Fabricated devices showed clear and steep single electron pass switching by applying only an input voltage signal, which was completely different from switching properties in the previous SE BDD node devices composed of two single electron switches. As the possible switching mechanism, the correlation between the probabilities of tunnelling thorough a single quantum dot in exit branches was discussed.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2006
Accession Number
ADA464522

Entities

People

  • Hideki Hasegawa
  • Seiya Kasai
  • Tamotsu Hashizume
  • Tatsuya Nakamura
  • Yuji Abe

Organizations

  • Hokkaido University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Circuits
  • Digital Circuits
  • Electron Microscopes
  • Electronics
  • Electrons
  • Fabrication
  • Field Effect Transistors
  • Heterojunctions
  • High Density
  • Information Science
  • Logic
  • Logic Gates
  • Nanomaterials
  • Quantum Circuits
  • Quantum Dots
  • Quantum Electronics
  • Switching

Fields of Study

  • Materials science

Readers

  • Applied Combinatorial Optimization and Logic Circuit Design.
  • Computer Programming and Software Development.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing
  • Quantum Science - Quantum Dots