Electron Transport in InAs/AlGaSb Ballistic Rectifiers

Abstract

Nonlinear transport properties of a ballistic rectifier fabricated from InAs/AlGaSb heterostructures are reported. The operation of the ballistic rectifier is based on the guidance of carriers by a square anti-dot structure. The structure was defined by electron beam lithography and wet chemical etching. The DC characteristics and magneto-transport properties of the ballistic rectifier have been measured at 77 K and 4.2 K. Rectification effects relying on the ballistic transport were observed. From the four-terminal resistance measured at low magnetic fields, we also observed magneto-resistance fluctuations corresponding to the electron trajectories and symmetry-breaking electron scattering, which are influenced by the magnetic field strength.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2006
Accession Number
ADA464532

Entities

People

  • Hiroshi Takahashi
  • Masashi Furukawa
  • Masataka Inoue
  • Masatoshi Koyama
  • Shigehiko Sasa
  • Toshihiko Maemoto

Organizations

  • Osaka Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Electron Beam Lithography
  • Electron Gas
  • Electron Mobility
  • Electron Scattering
  • Electrons
  • Fabrication
  • Full-Wave Rectifiers
  • Geometry
  • Heterojunctions
  • Magnetic Fields
  • Magnetoresistance
  • Quantum Wires
  • Rectifiers
  • Resistance
  • Semiconductors
  • Transport Properties
  • Transport Ships

Fields of Study

  • Materials science

Readers

  • Plasma Physics / Magnetohydrodynamics
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics
  • Microelectronics - Graphene