Electron Transport in Si Nanowires

Abstract

We investigate electron transport in silicon nanowires taking into account acoustic, non-polar optical phonons and surface/interface roughness scattering. We find that at very high transverse fields the reduced density of final states to which the carriers can scatter into gives rise to a reduced influence of interface-roughness scattering, which is promising result from a fabrication point of view.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2006
Accession Number
ADA464534

Entities

People

  • Dragica Vasileska
  • E. Ramayya
  • I. Knežević
  • Stephen M. Goodnick

Organizations

  • Arizona State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Boltzmann Equation
  • Crystal Lattice Vibrations
  • Electron Density
  • Electron Gas
  • Electron Mobility
  • Electrons
  • Equations
  • Mobility
  • Nanowires
  • Phonons
  • Roughness
  • Scattering
  • Simulations
  • Surface Roughness
  • Three Dimensional
  • Transport Ships
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Spectroscopy.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene