Magneto-Optics of GaAs Quantum Wire Lattices Grown by Selective-Area MOVPE

Abstract

We report the magneto-optical measurement of GaAs quantum wire lattices of 0.7 micrometer period grown on GaAs(111)B substrates by using the selective-area MOVPE technique. We measure the photoluminescence (PL) spectra at 60 mK from the triangular and the Kagome lattice patterns as well as from the unpatterned single quantum well (SQW) as a reference. While the PL from acceptors is dominant in all the samples, the PL spectra have a different peak between the wire structures and the SQW. When we apply a perpendicular magnetic field to the samples, the PL intensities slightly decrease up to 100 mT and then increase at higher magnetic fields with periodic oscillations in the triangular and the Kagome lattices. This oscillation is possibly attributed to the interference effect of electrons in the lattice patterns threaded by the magnetic flux.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2006
Accession Number
ADA464537

Entities

People

  • H. Takayanagi
  • Hitoshi Tamura
  • J. Motohisa
  • M. Yamaguchi
  • P. Mohan
  • S. Nomura
  • T. Akazaki
  • T. Fukui

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Electronics
  • Electronics Laboratories
  • Energy Bands
  • Fabrication
  • Magnetic Fields
  • Magnetic Flux
  • Magneto-Optics
  • Measurement
  • Optics
  • Physics
  • Quantum Electronics
  • Quantum Wells
  • Quantum Wires
  • Semiconductor Devices
  • Semiconductors
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Military History
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing
  • Quantum Science - Quantum Dots