Transport Properties of Beam-Deposited Pt Nanowires

Abstract

Pt wires were fabricated by using electron-beam (EB) and Ga focused-ion-beam (FIB) irradiation while providing C5H5Pt(CH3)3 gas through a nozzle. Electron transport properties of the wires were investigated. The resistance of the EB-deposited wires was quite high as deposited but was reduced by 3 4 orders of magnitude after 400 -500 degrees C annealing. The electron transport of the as-deposited EB-deposited wire was dominated by the variable range hopping and the Coulomb blockade simultaneously, and showed the antilocalization effect after 400 degrees C annealing. The electron phase-breaking length in the EB-deposited wire with 400 degrees C annealing, which was derived from a theoretical fitting, is ~10 nm at ~4 K and increases with decreasing temperature. This means that ~10 nm fabrication technology and improvement of coherence length are required for coherent vacuum nanoelectronics.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2006
Accession Number
ADA464540

Entities

People

  • F. Wakaya
  • Kazuya Murakami
  • M. Takai
  • N. Yamasaki
  • S. Abo
  • Y. Tsukatani

Organizations

  • Osaka University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Carbon Nanotubes
  • Electron Beam Lithography
  • Electron Beams
  • Electron Microscopes
  • Electron Tubes
  • Emission
  • Emitters
  • Fabrication
  • Ion Beams
  • Low Temperature
  • Magnetoresistance
  • Materials
  • Nanomaterials
  • Nanostructures
  • Nanowires
  • Transport Properties
  • Transport Ships

Fields of Study

  • Physics

Readers

  • Nanoscale Plasmonic Nanotechnology
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene