Phonon Limited Performance of III-V Nanowire Transistors

Abstract

We use a fully self-consistent three-dimensional quantum mechanical transport formalism to examine the performance of InAs based quantum wire transistors both in the ballistic limit and with phonon scattering included. We present a method for the inclusion of polar optical phonon scattering as a real-space self-energy term. We find that the ballistic performance of the devices can be recovered if the dopants in the system are kept away from the channel entrance and exit. When dopants are present at these key points, we find that the altered carrier energy, particularly in the source, has a significant impact on the device. This ballistic recovery is aided by the fact that at higher energies, polar optical phonon scattering loses its non-locality which leads to a reduced scattering rate in these confined systems.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2006
Accession Number
ADA464547

Entities

People

  • D. K. Ferry
  • M. J. Gilbert

Organizations

  • Arizona State University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Contour Integrals
  • Crystal Lattice Vibrations
  • Delta Functions
  • Electrical Engineering
  • Electronics
  • Electronics Industry
  • Engineering
  • Field Effect Transistors
  • Materials
  • Metal Oxide Semiconductors
  • Phonons
  • Quantum Wires
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics
  • Three Dimensional
  • Transistors

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Quantum Computing
  • Space