Optimization of Buffer Layers for InGaAs/AIGaAs PIN Optical Modulators Grown on GaAs Substrates by Molecular Beam Epitaxy

Abstract

In this work we compare the effect of the buffer layer on the device quality and surface morphology of strained InGaAs/AlGaAs PIN multiple quantum well (MQW) modulators. We examine GaAs buffer layers and linearly graded InGaAs buffer layers. Our results indicate that for lower indium concentrations in the quantum wells (less than about 23%) better device performance and surface morphology are obtained by growing directly on GaAs. PIN MQWs with indium mole fractions higher than about 24% have better properties when a linearly graded buffer layer is used.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 2000
Accession Number
ADA464630

Entities

People

  • D. Scott Katzer
  • G. Charmaine Gilbreath
  • K. Ikossi-anastasiou
  • Williams S. Rabinovich

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Absorption Spectra
  • Communication Systems
  • Epitaxial Growth
  • Materials
  • Measurement
  • Military Research
  • Modulators
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Optical Modulators
  • Optical Properties
  • Optimization
  • Quantum Wells
  • Spectra
  • Substrates
  • Surface Roughness

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing