GaAs/AIGaAs Multiquantum Well Resonant Photorefractive Devices Fabricated Using Epitaxial Lift-Off
Abstract
This letter deals with resonant photorefractive devices fabricated from multi-quantum wells of GaAs/Al0.3Ga.07As and operated in a quantum-confined Stark effect geometry. Details of the processing are presented. Epitaxial lift-off was used to remove the active device from the substrate. Low-temperature Al0.3Ga.07 was used as an insulator to form metal-insulator-semiconductor structures on both sides of the multi-quantum wells. Proton implant damage was used to improve the fringe visibility. Photorefractive wave mixing with a diffraction efficiency of approx. 0.03% was demonstrated. The incorporation of a nitride layer between the top electrode and the low-temperature AlGaAs increased the efficiency to 0.5%. The improvement is attributed to a reduction in the conduction of carriers across the low-temperature layer into the electrode.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1994
- Accession Number
- ADA464640
Entities
People
- A. J. Tsao
- C. S. Kyono
- D. Scott Katzer
- K. Ikossi-anastasiou
- S. R. Bowman
- Williams S. Rabinovich
Organizations
- United States Naval Research Laboratory