Monte Carlo Simulation of Implant Free InGaAs MOSFET

Abstract

The performance potential of n-type implant free In(0.25)Ga(0.75)As MOSFETs with high-kappa dielectric is investigated using ensemble Monte Carlo device simulations. The implant free MOSFET concept takes advantage of the high mobility in III-V materials to allow operation at very high speed and low power. A 100 nm gate length implant free In(0.25)Ga(0.75)As MOSFET with a layer structure derived from heterojunction transistors may deliver a drive current of 1800 A/m and transconductance up to 1342 mS/mm. This implant free transistor is then scaled in both lateral and vertical dimensions to gate lengths of 70 and 50 nm. The scaled devices exhibit continuous improvement in the drive current up to 2600 A/m and 3259 A/m and transconductance of 2076 mS/mm and 3192 mS/mm, respectively. This demonstrates the excellent scaling potential of the implant free MOSFET concept.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2006
Accession Number
ADA464653

Entities

People

  • A. Asenov
  • K. Kalna
  • M. Passlack

Organizations

  • University of Glasgow

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Data Science
  • Electrical Engineering
  • Electron Mobility
  • Electronic Mail
  • Electronics
  • Electrons
  • Engineering
  • High Electron Mobility Transistors
  • Information Science
  • Materials
  • Mobility
  • Monte Carlo Method
  • Semiconductors
  • Simulations
  • Statistics
  • Transconductance
  • United Kingdom

Fields of Study

  • Materials science

Readers

  • Regression Analysis.
  • Semiconductor Device Technology