The Impact of Unintentional Discrete Charges in a Nominally Undoped Channel of a Thin Body Double Gate MOSFET: Classical to Full Quantum Simulation

Abstract

A comparison of full quantum device simulation with semi-classical methods is made for an unintended single atomistic dopant at various locations in a 10 nm double gate MOSFET transistor. The density gradient method comes closest to the non-equilibrium Green function results for fails seriously when the unwanted charge is located well-within the channel.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2006
Accession Number
ADA464713

Entities

People

  • A. Asenov
  • A. Bermúdez Martínez
  • A. R. Brown
  • A. Svizhenko
  • B. Biegel
  • J. R. Barker
  • M. P. Anantram

Organizations

  • University of Glasgow

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Electrical Engineering
  • Electronics
  • Electrons
  • Engineering
  • Information Operations
  • Physical Sciences
  • Radiation
  • Simulations
  • Simulators
  • Space Missions
  • Thermionic Emission
  • Transistors
  • Transport Ships
  • Two Dimensional
  • Wave Interference

Readers

  • Integrated Circuit Design and Technology.
  • Materials Science and Engineering.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Quantum Computing