200 deg C Operation of a DC-DC Converter with SiC Power Devices
Abstract
Design, operation, and performance evaluation of a 180 W, 100 kHz, 270 V/28 V two-transistor forward dc-dc power converter are reported for elevated temperatures up to 200 deg C. Use of SiC power semiconductor devices, and high temperature powdered ferrite (for magnetics design), and characterization of ceramic (X7R) capacitors' leakage current over temperature are presented as well.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 2006
- Accession Number
- ADA464822
Entities
People
- Biswajit Ray
- Brett Jordan
- Hiroyuki Kosai
- James D. Scofield
Organizations
- Universal Energy Systems