High-Cycle Life Testing of RF MEMS Switches

Abstract

RF MEMS capacitive switches capable of order of-magnitude impedance changes have demonstrated operating lifetimes exceeding 100 billion switching cycles without failure. In situ monitoring of switch characteristics demonstrates no significant degradation in performance and quantifies the charging properties of the switch silicon dioxide film. This demonstration lends credence to the mechanical robustness of RF MEMS switches.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 2006
Accession Number
ADA464840

Entities

People

  • C. L. Goldsmith
  • D. I. Forehand
  • James C. M. Hwang
  • Zihang Peng

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Air Force Research Laboratories
  • Charge Density
  • Detectors
  • Dielectric Films
  • Dielectrics
  • Dioxides
  • Films
  • Frequency
  • Governments
  • Impedance
  • Insertion Loss
  • Microelectromechanical Systems
  • Monitoring
  • Silicon
  • Silicon Dioxide
  • Switching

Readers

  • Integrated Circuit Design and Technology.
  • Structural Health Monitoring of Composite Structures.