Millimeter-Wave Voltage-Controlled Oscillators in 0.13-micrometer CMOS Technology
Abstract
This paper describes the design of CMOS millimeter-wave voltage controlled oscillators. Varactor, transistor, and inductor designs are optimized to reduce the parasitic capacitances. An investigation of tradeoff between quality factor and tuning range for MOS varactors at 24 GHz has shown that the polysilicon gate lengths between 0.18 and 0.24 micrometer result in both good quality factor (>12) and Cmax/Cmin ratio (~3) in the 0.13-micrometer CMOS process used for the study. The components were utilized to realize a VCO operating around 60 GHz with a tuning range of 5.8 GHz. A 99-GHz VCO with a tuning range of 2.5 GHz, phase noise of --102.7 dBc/Hz at 10-MHz offset and power consumption of 7-15 mW from a 1.5-V supply and a 105-GHz VCO are also demonstrated. This is the CMOS circuit with the highest fundamental operating frequency. The lumped element approach can be used even for VCOs operating near 100-GHz and it results in a smaller circuit area.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 2006
- Accession Number
- ADA464949
Entities
People
- Changhua Cao
- Kenneth K. O.
Organizations
- University of Florida