Strain-Modulated Epitaxy: A Flexible Approach to 3-D Band Structure Engineering Without Surface Patterning

Abstract

Thin compliant growth substrates have been used to reduce the strain in lattice-mismatched overlayers during epitaxial growth. This letter reports a new thin compliant substrate technology which allows these thin substrates to be patterned on the bottom, bonded surface. This lateral strain variation (inverted stressor) in the growing film can be combined with the additional effects of strain-dependent growth kinetics to realize the lateral control of composition and thickness without any surface topography on the substrate. Initial demonstrations of the growth of InGaAs on GaAs bottom-patterned thin substrates are presented herein.

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Document Details

Document Type
Technical Report
Publication Date
Jul 08, 1996
Accession Number
ADA465042

Entities

People

  • April S. Brown
  • Carrier Carter-coman
  • Mark G. Allen
  • Nan M. Jokerst
  • Robert Bicknell-tassius

Organizations

  • Georgia Tech

Tags

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • D Band
  • Energy Bands
  • Engineering
  • Epitaxial Growth
  • Films
  • Geometry
  • Materials
  • Materials Processing
  • Thickness
  • Thin Films
  • Three Dimensional

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.