Towards Resonant-State THz Laser Based on Strained p-Ge and SiGe QW Structures
Abstract
The main focus of the project is to investigate the possibilities for population inversion between two-dimensional (2D) acceptor states and THz lasing in strained selectively doped SiGe quantum well (QW) structures, as well as the microscopic mechanism of a population inversion in resonant-state p-Ge laser (RSL) and conditions for continuous-wave (cw) operation of RSL and its parameters (the radiation spectrum, the range of frequency tuning, the output power, and the interval of working temperature) in this regime. For this purpose it is proposed: 1. to study the formation of resonant acceptor states; to determine energy spectrum of 2D shallow acceptor states in QWs (as a function of electric field, QW width, doping level, alloy composition, and impurity center position), and 3D resonant acceptor states in p-Ge under stress (as a function of strain); 2. to study radiative transitions between resonant and localized shallow acceptor states split by size quantization and strain in 2D and by stress in 3D; to investigate the possibilities for population inversion between split-off and ground states; 3. to study effect of electric field heating of holes on transport phenomena and THz luminescence; 4. to calculate carrier life times of resonant states, the probability of coherent capture and re-emission processes by resonant states as well as elastic resonant scattering in doped strained 2D structures and in strained bulk p-Ge; to calculate the probabilities of optical transitions between 2D resonant and local states of impurities; 5. to calculate hot-carrier distribution function taking into account resonant-state scattering and to develop theoretical models of population inversion.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 2006
- Accession Number
- ADA465287
Entities
People
- Kagan M. Solomonovich