High-Filling-Fraction Inverted ZnS Opals Fabricated by Atomic Layer Deposition

Abstract

The infiltration of three-dimensional opal structures has been investigated by atomic layer deposition. Demonstrations using ZnS:Mn show that filling fractions >95% can be achieved and that the infiltrated material is of high-quality crystalline material as assessed by photoluminescence measurements. These results demonstrate a flexible and practical pathway to attaining high-performance photonic crystal structures and optical microcavities.

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Document Details

Document Type
Technical Report
Publication Date
Sep 29, 2003
Accession Number
ADA465733

Entities

People

  • C. J. Summers
  • C. W. Neff
  • D. Morton
  • E. Forsythe
  • J. S. King
  • S. Blomquist
  • W. Park

Organizations

  • Georgia Tech

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Crystal Structure
  • Crystals
  • Energy Bands
  • Engineering
  • Films
  • Materials
  • Materials Engineering
  • Materials Processing
  • Materials Science
  • Photoluminescence
  • Photonic Crystals
  • Physics
  • Refractive Index
  • Thin Films
  • Three Dimensional

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.