Molecular Random Access Memory Cell
Abstract
Electronically programmable memory devices utilizing molecular self-assembled monolayers are reported. The devices exhibit electronically programmable and erasable memory bits compatible with conventional threshold levels and a memory cell applicable to a random access memory is demonstrated. Bit retention times >15 min have been observed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 04, 2001
- Accession Number
- ADA466079
Entities
People
- A. M. Rawlett
- D. W. Price
- J. M. Tour
- Jiayu Chen
- M. A. Reed
Organizations
- Yale University