A Comparison of High Temperature Performance of SiC DMOSFETs and JFETs (Preprint)
Abstract
High temperature characteristics of 4H-SiC power JFETs and DMOSFETs are presented in this paper. Both devices are based on pn junctions in 4H-SiC, and are capable of 300 degrees C operation. The 4H-SiC JFET showed very predictable, well understood temperature dependent characteristics, because current conduction depends on the drift of electrons in the bulk region, which is not restricted by traps in the MOS interface or pn junctions. However, in a 4H-SiC DMOSFET, electrons must flow through the MOS inversion layer with very high interface state density. At high temperatures, transconductance of the device improves and threshold voltage shifts negative because less electrons are trapped in the interface states, resulting in a much lower MOS channel resistance. This cancels out the increase in drift layer resistance, and as a result, a temperature insensitive on-resistance can be demonstrated. Performances of the two devices are compared, and a discussion of issues for high temperature applications is presented.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 2006
- Accession Number
- ADA466113
Entities
People
- Anant Agarwal
- Bradley Heath
- Brett Hull
- Fatima Husna
- James Richmond
- James Scofield
- John Palmour
- Sei-hyung Ryu
- Sumi Krishnaswami
Organizations
- Wolfspeed