Semiconductor Quantum Dot Resonant Tunnelling Spectroscopy

Abstract

Recently, three-dimensionally laterally confined semiconductor quantum wells ("quantum dots") were realized. These structures are analogous to semiconductor atoms. They have an energy level separation of order 25meV and are tunable by means of the confining potentials. A systematic study reveals a (radius) -1 dependence on the energy separation. In this paper, electron transport through quantum dots is presented and analyzed. The spectra correspond to resonant tunneling from laterally confined emitter contact subbands through the discrete three-dimensionally confined quantum dot states. The effects of two dots in series, and Fermi-level effects, are presented.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1992
Accession Number
ADA466214

Entities

People

  • James H. Luscombe
  • John N. Randall
  • Mark A. Reed

Organizations

  • Yale University

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Crossings
  • Electron Energy
  • Electronic Equipment
  • Electronic States
  • Electrons
  • Energy
  • Energy Levels
  • Fermi Levels
  • Low Temperature
  • Quantum Dots
  • Quantum Numbers
  • Resonance
  • Semiconductor Devices
  • Semiconductors
  • Spectra
  • Spectroscopy
  • Transitions

Readers

  • Calculus or Mathematical Analysis
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing