Fabrications and Characterizations of ZnO/Zn1-xMgxO Nanorod Quantum Structures

Abstract

Recent demonstration of semiconductor nanorod heterostructures opens up significant opportunities for fabrication of electronic and photonic nanodevices on single nanorods. The semiconductor nanorod quantum structures with well defined interfaces are main components for nanoscale resonant tunneling devices, field effect transistors, and light-emitting devices since the nanorod quantum structures (QSs) enable novel physical properties such as quantum confinement to be exploited.

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Document Details

Document Type
Technical Report
Publication Date
Nov 02, 2005
Accession Number
ADA466259

Entities

People

  • Gyu-chul Yi

Organizations

  • Pohang University of Science and Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Demonstrations
  • Fabrication
  • Field Effect Transistors
  • Heterojunctions
  • Information Operations
  • Nanoscale Devices
  • Nanotechnology
  • Physical Properties
  • Quantum Tunneling
  • Semiconductors
  • Standards
  • Transistors
  • Tunneling

Readers

  • Nanofabrication and Microfabrication.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing