Pseudomorphic Bipolar Quantum Resonant-Tunneling Transistor
Abstract
A bipolar tunneling transistor has been fabricated in which ohmic contact is made to the strained p+ InGaAs quantum well of a double-barrier resonant-tunneling structure. The heterojunction transistor consists of an n-GaAs emitter and collector, undoped AlAs tunnel barriers, and a pseudomorphic p+ InGaAs quantum-well base. By making ohmic contact to the p-type quantum well, the hole density in the quantum-well base is used to modulate the base potential relative to the emitter and collector terminals. With control of the quantum- well potential, the tunneling current can be modulated by application of a base-to-emitter potential. This paper details the physical and electrical characteristics of the device. It is found that the base-emitter voltages required to bias the transistor into resonance are well predicted by a self-consistent calculation of the electrostatic potential.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1989
- Accession Number
- ADA466364
Entities
People
- Alan C. Seabaugh
- Dewey L. Farrington
- John N. Randall
- Mark A. Reed
- Richard J. Matyi
- William R. Frensley
Organizations
- Texas Instruments