Linearity and Efficiency Performance of GaN HEMTs with Digital Pre-Distortion Correction (Preprint)
Abstract
The linearity and efficiency performance was studied for large periphery AlGaN/GaN HEMTs. Comparison was made between inherent linear device performance and device performance using Digital Pre-Distortion (DPD) correction. Additionally, both drain voltage and current were optimized to provide high efficiency for a specified linearity. Significant improvements in linear efficiency were achieved using the DPD correction with a best measured PAE of 43.5%, at a Vd of 28 V, using two carrier W-CDMA.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 2006
- Accession Number
- ADA466895
Entities
People
- D. S. Green
- J. B. Shealy
- Justin M. Brown
- M. J. Poulton
- R. Vetury
- S. R. Gibb
- W. K. Leverich