GaN Wide Band Power Integrated Circuits (Preprint)

Abstract

Gallium Nitride (GaN) amplifiers have demonstrated very high power density as well as wide band width in previous research. This paper examines their use in supplying flat gain, power, and linearity across a large band width. It demonstrates two types of power amplifiers: a Ft Doubler (FT2) amplifier and a Cascode amplifier, both of which require a simple PCB tune. Both amplifiers show 0.2 to 4GHz bandwidth with 30 dBm P1dB output power. The 3GPP WCDMA output power is 20 dBm at -45 dBc ACLR.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 2006
Accession Number
ADA466897

Entities

People

  • D. S. Green
  • J. B. Shealy
  • J. D. Brown
  • J. P. Conlon
  • M. J. Poulton
  • Na Zhang
  • R. Vetury
  • S. Gibb

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Air Force Research Laboratories
  • Amplifiers
  • Bandwidth
  • Circuit Boards
  • Circuits
  • Communication Systems
  • Compound Semiconductors
  • Electron Mobility
  • Elements
  • Field Effect Transistors
  • Gallium Nitrides
  • Integrated Circuits
  • Linearity
  • Networks
  • Power Amplifiers
  • Silicon Carbide

Fields of Study

  • Physics

Readers

  • Energy Conservation and Renewable Energy Engineering.
  • Integrated Circuit Design and Technology.
  • Microwave Engineering.

Technology Areas

  • Microelectronics