Infrared and Electrical Properties of Amorphous Sputtered (LaxA1l-x)2O3 films

Abstract

Amorphous (LaxAl(sub 1-x))(sub 2)O3 (0.61 less than or equal to x less than or equal 0.73) films have been deposited by sputtering in a partially reactive atmosphere. The average dielectric constant of the as-deposited films was 13.4 and 12.5 following annealing at 700 C for 60 min in N2; both values were much lower than the single crystal values ~24 and 28 for LaA1O3 and La2O3, respectively. Leakage current densities were ~10-8 A /sq cm for an applied field of 1 MV /cm for film thicknesses ~75 nm. Fourier transform infrared spectroscopy reveals transverse optic mode peaks at 723 and 400 /cm and corresponding longitudinal optic modes at 821 and 509 /cm. The density of the amorphous phase is estimated to be ~0.9 times

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2003
Accession Number
ADA467033

Entities

People

  • R. A. Devine

Organizations

  • Air Force Research Laboratory

Tags

DTIC Thesaurus Topics

  • Air Force Research Laboratories
  • Annealing
  • Crystals
  • Current Density
  • Dielectric Permittivity
  • Dielectrics
  • Electrical Properties
  • Frequency
  • Infrared Spectroscopy
  • Materials
  • Measurement
  • Refractive Index
  • Semiconductor Devices
  • Semiconductors
  • Single Crystals
  • Spectroscopy
  • Sputtering

Fields of Study

  • Materials science

Readers

  • Mathematics or Statistics
  • Optical Fiber Sensing and Electromagnetic Propagation.
  • Thin Film Deposition Science.