TeraHertz Nanodevices for Communiction, Imaging, Sensing and Ranging
Abstract
This research program focused on the design, fabrication and optimization of THz devices using Group IV semiconductor nanotechnology. The devices were based on SiGe quantum wells (OWs), by intracenter transitions in doped nanostructures and photonic crystals fabricated by MBE and CVD. The SiGe OWs gave good performance, but the output powers were low and the operating temperature needed to be cryogenic. The dopant emitters were simpler in design, but the initial devices needed low temperatures so that the dopant states are occupied (carrier freeze out). With deep energy dopants, such as nitrogen in SiC, however, the emission occurs at relatively high temperatures, up to 150 K. We have demonstrated the operation of very high performance with the emitted power near I mW from a device several square mm in surface area.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 2006
- Accession Number
- ADA469322
Entities
People
- J. Kolodzey
- Keith Goossen
Organizations
- University of Delaware