New Lattice-Mismatched Materials and Services
Abstract
In this program, we have been able to advance materials and device work in the area of lattice-mismatched semiconductor materials. In the silicon-germanium materials system, we have explored the use of strained layers together hydrogen implanted into the layers for an exfoliation process. This layer transfer technique was used to demonstrate germanium on insulator (GOI) substrate formation using virtual Ge/Si wafers. In III-V materials systems, we have investigated the formation of cracks during GaAs growth on virtual GeAs/Si, GaAs/Ge/SiGe/Si, GaAs and GaAs/Ge, and show that the integrated intensity of the InGaAs QW on GaAs/Ge/SiGe/Si and GaAs are nearly equivalent. We have demonstrated continuous-wave room temperature lasing of GaAs lasers on silicon.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 23, 2007
- Accession Number
- ADA470047
Entities
People
- Eugene Fitzgerald Jr.
Organizations
- Massachusetts Institute of Technology