Residual Stress and Fracture of PECVD Thick Oxide Films for Power MEMS Structures and Devices

Abstract

Plasma enhanced chemical vapor deposited (PECVD) silicon oxide (SiOx) is the most commonly used interlayer dielectric (ILD) in MEMS devices and structures. In this project, PECVD SiOx is chosen as an example for the systematic study of mechanical behavior and underlying casual mechanisms of amorphous thin films for MEMS applications, which are generally less well understood because of the complex interplay among the deformation mechanisms.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2007
Accession Number
ADA470256

Entities

People

  • Xin Zhang

Organizations

  • Boston University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amorphous Materials
  • Ceramic Materials
  • Chemical Vapor Deposition
  • Elastic Properties
  • Material Degradation Processes
  • Materials
  • Materials Processing
  • Materials Science
  • Materials Testing
  • Mechanical Properties
  • Mechanical Working
  • Mechanics
  • Microelectromechanical Systems
  • Modulus Of Elasticity
  • Plastic Properties
  • Stress Strain Relations
  • Three Dimensional

Readers

  • Structural Health Monitoring of Composite Structures.
  • Surface Engineering/Surface Coating Technology.
  • Systems Analysis and Design